本文
No.2（1999）5.Surface modification by high-energy ion irradiation with electron beam vapor deposition
Shouhei TANIGUCHI and Shuichi WAKAYAMA
Silicon carbide (SiC) thin films were formed on graphite plates by high-energy (MeV) ion irradiation with an electron-beam (EB) vapor deposition system. The surface images of SiC layer were observed by a scanning electron microscope (SEM) with energy dispersive X-ray spectroscopy (EDS). The depth profiles and chemical bonding states of elements in the modification layer were studied by a X-ray photoelectron spectroscopy (XPS). The structure of the surface layer was measured by infrared absorption spectroscopy (FT-IR). It was shown that silicon carbide was formed by this system and the shape of the surface was affected by irradiation angle. Not all absorption peaks for crystalline SiC were observed in the FT-IR spectrum for SiC layer.
Keywords
Surface modification, Silicon carbide, High-energy ion irradiation, Electron - beam vapor deposition, Graphite, Carbon/carbon composite
